FDMS86163P datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
* Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
* Very low RDS-on mid voltage P-channel silicon technology .

Application

as well as load switch applications
* 100% UIL tested
* RoHS Compliant May 2014 General Description This P-Chan.

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications
* Active Clamp Swi.

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